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Dual Quantum Tunneling in a Monolithic n-i-p Perovskite/c-Si Tandem Device: Bottom Cell with Modified SQIS Structure
Z.Q. Ma, K.J. Wu, Z.X. Lan, Y.L. Wang, F. Xu, L. Zhao
Heterojunction, Tandem, High-Efficiency, n-Si, Perovskite
Perovskites and Other Non-Silicon Materials and Devices, Multijunctions/Tandems
Subtopic: Tandems
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BV.2.69
525 - 528
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-3BV.2.69
0,00 EUR
Document(s): paper, poster


An efficient photovoltaic framework has been constructed with metal organic-inorganic halide perovskite upper cell and asymmetric heterojunction silicon-based dual carrier’s tunneling as bottom cell, in which a natural recombination layer of about 80 nm ITO film is deposited by r.f magnetron sputtering of hole selected ultra-thin passivating contact a-SiOx(In) layer (1.3 – 1.8 nm) on silicon substrate coupled with ITO capping layer. At rear side of the Si wafer a wet chemical oxidized SiOx (<1.6 nm) and subsequently d.c magnetron sputtered TiNx coupling layer of SiOx/TiNx acts as electron selective contact. Thus, the quantum tunneling from both hole and electron in the front or back of silicon wafer has been figured out on both sides, respectively. Besides the quantum tunneling and the pinholes within the silicon oxides playing a crucial role, the delocalized states and negative charged indium (In) are localized between ITO film and Si substrate are significant for hole diffusion and field passivation effects in the device. Finally, the Si-based bottom cell is covered by a structure of merit n-i-p perovskite cell as a monolithic tandem PV system. The photoelectric conversion efficiency of the tandem device has been numerically evaluated to be more than 30 %.