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APCVD (N) Poly-Si Passivating Contacts on Textured and Planar Surfaces
R. Glatthaar, T. Okker, F. Huster, B. Cela Greven, S. Seren, G. Hahn, B. Terheiden
Passivation, Polycrystalline, Metallization, Texturisation
Silicon Materials and Cells
Subtopic: Manufacturing & Production of Si Cells
Event: 8th World Conference on Photovoltaic Energy Conversion
Session: 1DO.11.5
79 - 82
ISBN: 3-936338-86-8
Paper DOI: 10.4229/WCPEC-82022-1DO.11.5
0,00 EUR
Document(s): paper


Planar and textured APCVD (n) poly-Si/SiOx passivating contacts with a ~60 nm poly-Si layer were metallized by screen-printing. Higher contact resistivity on textured samples C,textured (~6-7 mΩcm² compared to C,planar ~3 mΩcm²) can be attributed to a thinner poly-Si layer and to a more aggressive etching behaviour of the paste around the pyramid tips. Since this behaviour also occurs in classical contact formation on monocrystalline Si, we conclude that the geometrical structure of the pyramids affects the contact formation more than the structure of the used layers. Passivation quality was measured in the non-metallized region between 2-4 fA/cm2 for planar samples and to a minimum of 17 fA/cm2 for textured samples. In the metallized regions, J0,Met increases towards higher firing temperatures from ~20 fA/cm2 to ~140 fA/cm2 for planar samples and from 140 fA/cm2 to 830 fA/cm2 for textured samples.