Search documents

Browse topics

Document details

Measuring and Modeling the Rate of Power Loss in N-PERT Cells Associated with PID-P as a Function of Encapsulant Resistivity and Irradiance
B.M. Habersberger, P. Hacke
Degradation, Encapsulation, Reliability, n-Type, PERT
Photovoltaic Modules and BoS Components
Subtopic: Materials for PV Modules, Durability, Reliability and Accelerated Testing Methods
Event: 8th World Conference on Photovoltaic Energy Conversion
Session: 3DV.3.35
939 - 941
ISBN: 3-936338-86-8
Paper DOI: 10.4229/WCPEC-82022-3DV.3.35
0,00 EUR
Document(s): paper, poster


PID-p is commonly observed on the rear and front faces of bifacial PERC and n-PERT cells, respectively. While PID-p has been previously reported to be recoverable under light exposure as well as prevented or mitigated via the use of high-resistivity encapsulants, the relative rates of degradation and recovery processes, as well as their dependence on factors such as temperature, irradiance, and component resistivity are not well understood. Here, we expand on a recent report describing time-dependent PID measurements with simultaneous irradiance on minimodules comprising n-PERT cells and four encapsulants of varying resistivity. Additional physics are introduced with the goal of relating laboratory PID measurements to fielded module performance.