Title:	Influence of Production Processes on PID-s Sensitivity of c-Si Modules and Novel Mitigation Strategies
Author(s):	A. Stauffenberg, B. Jaeckel, M. Pander, J. Froebel, C. Erban
Keywords:	c-Si, Degradation, Encapsulation, Reliability, PV Module
Topic:	Photovoltaic Modules and BoS Components
Subtopic:	Materials for PV Modules, Durability, Reliability and Accelerated Testing Methods
Event:	8th World Conference on Photovoltaic Energy Conversion
Session:	3DO.19.5
Pages:	605 - 608
ISBN:	3-936338-86-8
Paper DOI:	10.4229/WCPEC-82022-3DO.19.5
Price:	0,00 EUR
Document(s):	paper

Abstract/Summary:

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Potential-induced degradation (PID) is one of the major degradation mechanisms of PV modules, reducing their power and useful time of operation. Novel mitigation strategies for the shunting type, PID-s, on module level are investigated by varying production parameters and materials in modules. This includes variations of encapsulant material (silicone and EVA), silicone mixing ratio and degree of EVA cross-linking as well as different front and back cover constructions using glass and transparent polymers. Modules are stressed under IEC standard conditions for PID-s and characterized using I-V-characteristics and electroluminescence imaging. Modules with silicone encapsulant are resistant to degradation after 300+ hours of PID-s stress exposure, but are not with damp heat preconditioning. A higher mixing ratio between silicone and hardener might benefit PID-s resistance. Degradation of modules with EVA encapsulant varies strongly with parameters: A PID insensitive EVA with high degree of cross-linking reduces PID-s sensitivity, but ultimately can’t stop degradation. Recovery from PID-s by inverting the potential is possible but limited, depending on the degree of degradation. Modules with a polymer sheet in front instead of glass show significantly reduced PID-s susceptibility, leading to a new mitigation strategy.