Search documents

Browse topics

Document details

Defect Analysis of Graded CdSexTe1-x/CdTe Thin-Film Solar Cells by Means of Thermal Admittance Spectroscopy
M.  Schönau, M. Nicklaus, B. Hüttl, G. Papageorgiou, R. Arndt, B. Späth, B. Siepchen
CdTe, Defects
Evolving and Emerging Technologies: Tandems; Thin Film absorbers; III-V; New Materials and Concepts; Advanced Modelling
Subtopic: CI(G)S, CdTe and Related Thin Films; Organic and Dye-Sensitised Devices
Event: 8th World Conference on Photovoltaic Energy Conversion
Session: 2AV.2.25
342 - 345
ISBN: 3-936338-86-8
Paper DOI: 10.4229/WCPEC-82022-2AV.2.25
0,00 EUR
Document(s): paper


Thermal admittance spectroscopy (TAS) is often used to analyze trap states in CdTe thin-film photovoltaics. Specifically, the apparent energy level and the concentration of defects can be calculated using this method. In this work, we present TAS measurements on CdSeTe photovoltaic devices with varying Se concentrations and power conversion efficiencies from 12 % to 20 %. The results show two main trap signatures. The defects concentrations are evaluated using the emission parameter instead of the typically used capture cross-section. After correcting the emission parameter by the kinetic compensation effect, plots of PV performance versus the emission parameter of trap signature 1 show a good correlation, indicating that the emission parameter is suitable for determining concentration differences between the various samples.