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Early Detection of Potential-Induced Degradation via the Shunt Resistance in CIGS Thin Film Solar Modules
L. Gerstenberg, R.K. Bala Krishnan, V. Wesselak
Degradation, CIGS, Shunt Resistance
Photovoltaic Modules and BoS Components
Subtopic: Materials for PV Modules, Durability, Reliability and Accelerated Testing Methods
Event: 8th World Conference on Photovoltaic Energy Conversion
Session: 3DV.3.14
898 - 901
ISBN: 3-936338-86-8
Paper DOI: 10.4229/WCPEC-82022-3DV.3.14
0,00 EUR
Document(s): paper


Additionally to a reduction of VOC, CIGS Thin Fim Solar Modules also show shunting-type PID under negative bias stress. In this paper, a known method to monitor the progress of PID-s in c-Si modules via the shunt resistance is applied to CIGS TFSM. Measuring the dark IV curves of CIGS TFSM directly in the climatic chamber enables linking the change in shunt resistance to the occurring power loss. Results show that the shunt resistance decreases before a change in VOC occurs, which makes the shunt resistance an appropriate PID indicator for CIGS TFSM.