Title:	Influence of Bulk Carrier Lifetime on Efficiency Recovery in Gated Solar Cells
Author(s):	A. Kumar, N. Chatterji, A. Antony, P.R. Nair
Keywords:	Photovoltaic Cells, Field Effect Solar Cell, Light and Elevated Temperature-induce Degradation (LeTID)
Topic:	Silicon Materials and Cells
Subtopic:	Characterisation & Simulation of Si Cells
Event:	8th World Conference on Photovoltaic Energy Conversion
Session:	1DV.4.15
Pages:	180 - 183
ISBN:	3-936338-86-8
Paper DOI:	10.4229/WCPEC-82022-1DV.4.15
Price:	0,00 EUR
Document(s):	paper

Abstract/Summary:

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Gated solar cell architectures promise to recover the efficiency loss due to interface degradation. Here, we address the impact of the material quality of the absorber layer and the efficiency recovery window of such gated solar cells. For a poorly passivated interface, the performance is limited by the interface recombination. With additional control gate architecture, the interface recombination at the rear interface can be reduced leading to the dependence of performance on the bulk lifetime of the solar cell. For surface recombination velocity (Sb) of 1000 cm/s, in comparison to the reference solar cell, the efficiency of the cell is improved by 1.28 % and 1.81 % for bulk lifetimes of 0.1 and 10 ms, respectively. Thickness-dependent gated solar cell results show that thicker cells require a higher bulk lifetime to achieve high efficiency, while thinner cells are rather independent of the bulk lifetime. Our results indicate that gated solar cells could be of interest to achieving high-efficiency solar cells with heterogeneous materials with low-cost fabrication.