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Theoretical Study on the Improved Bi-Layer Absorber of Silver Incorporated SB2SE3 Devices
S. Lee, M. McInenery
Silver, Sb2Se3, Thin Film Solar Cells, Bi-Layer Devices
Evolving and Emerging Technologies: Tandems; Thin Film absorbers; III-V; New Materials and Concepts; Advanced Modelling
Subtopic: CI(G)S, CdTe and Related Thin Films; Organic and Dye-Sensitised Devices
Event: 8th World Conference on Photovoltaic Energy Conversion
Session: 2DO.8.6
276 - 278
ISBN: 3-936338-86-8
Paper DOI: 10.4229/WCPEC-82022-2DO.8.6
0,00 EUR
Document(s): paper


We have studied Ag incorporated Sb2(SxSe1-x)3 bi-layer devices by modeling and simulation to optimize the absorber layer. Four different device structures are extensively investigated to optimize the device configuration. Firstly, as a frame of reference, simple single-layer devices are studied with the absorber film of each AgSb(SxSe1-x)3 and Sb2(SxSe1-x)3 as the Sulfur composition increases. Following the study of reference devices, the impact of Sulfur composition on bi-layer devices has been modeled and simulated with two different absorber configurations such as Sb2(SxSe1-x)3/AgSb(SxSe1-x)3 and AgSb(SxSe1-x)3/ Sb2(SxSe1-x)3. Compared with any single-layer devices, the absorber configuration of AgSb(SxSe1-x)3/ Sb2(SxSe1-x)3 bi-layers shows best performance at the Sulfur composition, x = 0.4. This is ascribed to the reduced effective Schottky barrier by 126 mV at the back contact, improving the roll-over effect by 4.3 times at 1 V. The resulting efficiency is 18.6 %, Voc, is 778.9 mV, Jsc is 37.2 mA/cm2, and FF is 64.0 %. Once the bi-devices with the highest efficiency and the optimal Sulfur composition are identified, a set of different device parameters have been studied to optimize these bi-layer devices further. The best efficiency is 21.4 % with Voc (822 mV), Jsc (38.1 mA/cm2), and FF (68.4 %) based on this study.