login

Search documents

Browse topics

Document details

 
Title:
 
Industrial Negatively Charged c-Si Surface Passivation by Inline PECVD AlOx
 
Author(s):
 
D. Kania, P. Saint-Cast, D. Wagenmann, M. Hofmann, J. Rentsch, R. Preu
 
Keywords:
 
Passivation, PECVD, Aluminium/Aluminum Oxide
 
Topic:
 
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Materials and Cells
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 2DV.1.84
 
Pages:
 
2275 - 2278
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-2DV.1.84
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


A high-rate plasma-enhanced chemical-vapor-deposition (PECVD) process for aluminium oxide layers was developed at low temperatures to reduce minority carrier recombination on p-type c-Si surfaces. A maximum effective surface recombination velocity Smax of 10 cm s-1 was obtained on highly doped (1 Ω cm) p-type substrates. The optical constants n and k, the atomic composition of the layer, the surface charge density Qox and the interface defect density Dit of the PECVD AlOx layers were measured. Our main goal was to transfer the aluminium oxide deposition process from ALD technique to an industrial inline PECVD system with the aim to implement highquality field-effect passivation into a large and fast deposition system applicable in the industry. PECVD of AlOx can be transferred to already existing industrial inline systems to allow for a fast spreading of the technology. Excellent passivation quality can be obtained with AlOx PECVD deposition with deposition rates at least one order of magnitude higher compared to ALD. First cell results applying a close-to-industry approach with screen-printed front and rear metallisation on CZ-Si substrates (1252 mm2) showed VOC values above 630 mV.