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Light-Trapping for Very Thin a-Si:H/μc-Si:H Solar Cells
A. Gordijn, K. Bittkau, E. Bunte, C. Haase, J. Hüpkes, J. Kirchhoff, S. Schicho, M. Schulte, H. Zhu
Microcrystalline-Silicon, Deposition Rate, TCO, Zinc Oxide, Amorphous Silicon (a-Si)
Thin Film Solar Cells
Subtopic: Amorphous and Microcrystalline Silicon Solar Cells
Event: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain
Session: 3CO.13.5
2798 - 2801
ISBN: 3-936338-26-4
Paper DOI: 10.4229/25thEUPVSEC2010-3CO.13.5
0,00 EUR
Document(s): paper


With decreasing absorber layer thickness, the efficiency of a-Si:H/μc-Si:H tandem solar cells decreases due to the decreased a lower absorption. Nevertheless, such thin devices have considerable advantages regarding production costs, electrical properties and stability. In order to improve the generated photo-current of such thin tandem cells, the surface morphology should be optimized for that specific case. In order to tap this potential, a variation of the standard texture-etched ZnO:Al front contact with much smaller feature sizes is applied in thin tandem cells, which leads to a considerable improvement in photo-current. An a-Si:H/μc-Si tandem cell with a total silicon thickness of only 600 nm (for which the deposition time of the absorber layers is 22 minutes in total) on a high rate texture-etched ZnO:Al (with a deposition time of only 2 minutes) was obtained with an initial efficiency of 9.4%.