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Spectral Optical Characteristics of Silicon Nanowire System: Simulative Prediction Followed by Experiments
M.K. Hossain, A.W. Mukhaimer, B. Salhi
Nanowire, Modelling / Modeling, Absorption, Photovoltaic (PV), Excitation Generation
Silicon Cells
Subtopic: Characterisation & Simulation Methods for Si Cells
Event: 35th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.3.30
736 - 738
ISBN: 3-936338-50-7
Paper DOI: 10.4229/35thEUPVSEC20182018-2DV.3.30
0,00 EUR
Document(s): paper


Vertically aligned silicon nanowires (Si-NWs) facilitate efficient light trapping and thus been expected long to improve thin film based solar cell efficiency. A vapor liquid solid technique has been exercised to grow Si- NWs of coverage, ca. 6.5 × 108/cm2 in chemical vapor deposition reactor. A variation in dimensions (i.e. length and diameter) of as-grown Si-NWs were further characterized through scanning electron microscope. Keeping in mind the geometry of Si-NWs, a model was developed in finite different time domain analysis to extract several optical characteristics (i.e. absorption depth profile, electromagnetic field distribution, Poynting vector, exciton generation rate distribution, etc.) that influence the efficiency of nanowire based thin film solar cell. To the extend, aforementioned optical characteristics were further analyzed spectral wise step by step ranging from near ultraviolet to near infrared. Photon absorption at 700 nm was found to be most effective in this particular Si-NWs model system. Correlated demonstration amongst absorption depth profile, electric field confinement, energy flow distribution and excitation generation rate distribution as investigated in this work opens new avenues and possibilities to improve current nanowires-based optoelectronic devices, particularly thin film solar cell.