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P-Type µc-Si:H Based Hole Selective Fired Passivating Contacts (FPC) without Hydrogenation After Firing
A. Desthieux, B. Bazer-Bachi, G. Goaer, E. Drahi, J. Posada, P. Roca i Cabarrocas
Silicon Solar Cell(s), Firing, Microcrystalline Silicon, Passivating Contact, Hole Selective Contact
Silicon Materials and Cells
Subtopic: Low Temperature Route for Si Cells
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.3.27
532 - 535
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-2DV.3.27
0,00 EUR
Document(s): paper


The Fired Passivated Contact (FPC) structure allows the integration of passivating contacts with a low thermal budget by removing the high temperature crystallisation step usually used for standard TOPCon fabrication. However, these structures usually necessitate a post-firing hydrogenation in order to maintain high passivation quality. In this study, we demonstrate the feasibility of FPC process without hydrogenation after firing. We focus on the integration of boron-doped hydrogenated microcrystalline silicon ((p) µc-Si:H) for the silicon-based layer. The passivation properties of chemical silicon oxide (SiOx)\(p) µc-Si:H\silicon nitride (SiNx:H) stacks are studied, as well as the role of SiNx:H and aluminium oxide (AlOx) to act as diffusion barriers against hydrogen exodiffusion during the firing step.